APT4016BN Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT4016/4018BN
30
VGS=10V
6.5V
24
6V
18
12
5.5V
6
5V
4.5V
0
0
40
80
120 160 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
30
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
24
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25°C
TJ = +125°C
18
12
6 _{TJ = +125°C}
TJ = -55°C
TJ = +25°C
00
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
32
APT4016BN
24
APT4018BN
16
8
0 ₂₅
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 0.5 I_D [Cont.]
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
30
VGS=10V
6.5V
24
6V
18
12
5.5V
6
5V
4.5V
0
0
1
2
3
4
5
6
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.50
2.00
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V_GS = 10V @ 0.5 I_D [Cont.]
1.50
VGS=10V
1.00
VGS=20V
0.50 ₀
20
40
60
80
100
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE