APT4016BN Datasheet, PDF (2/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 1.8Ω
APT4016/4018BN
MIN TYP MAX UNIT
2850 3500
690 900 pF
280 400
130 200
20
30
nC
60
90
15
30
42
84
ns
90 135
65 130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
I_S
Continuous Source Current
(Body Diode)
APT4016BN
APT4018BN
I_SM
Pulsed Source Current ¹
(Body Diode)
APT4016BN
APT4018BN
V_{SD Diode Forward Voltage} ² _{(VGS = 0V, IS = -ID [Cont.])}
t _rr
Reverse Recovery Time (I_S = -I_D [Cont.], dl_S/dt = 100A/µs)
Q _rr Reverse Recovery Charge (I_S = -I_D [Cont.], dl_S/dt = 100A/µs)
MIN TYP MAX UNIT
31
29
Amps
124
116
1.3 Volts
350 700 ns
4.5
9
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions / Part Number
MIN
SOA1
SOA2
I_LM
Safe Operating Area
V_DS = 0.4 V_DSS, I_DS = P_D / 0.4 V_DSS, t = 1 Sec. ₃₆₀
Safe Operating Area
I_DS = I_D [Cont.], V_DS = P_D / I_D [Cont.], t = 1 Sec. ₃₆₀
Inductive Current Clamped
APT4016BN
124
APT4018BN
116
TYP
MAX
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
UNIT
Watts
Amps
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.02
Note:
0.01
0.005
t1
t2
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION