APT25GP120B Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
60
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
40
30
20
10
T_C=125°C
T_C=25°C
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1,
100
Output
Characteristics(V_GE = 15V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
60
TJ = -55°C
40
TJ = 125°C
TJ = 25°C
20
0
0 1 2 3 4 5 6 7 8 9 10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
4.5
4
I_C= 50A
3.5
I_C= 25A
3
I_C= 12.5A
2.5
2
1.5
1
0.5
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.8
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
60
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
APT25GP120B
40
30
20
T_C=125°C
10
T_C=25°C
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 25A
14 ^{TJ = 25°C}
V_CE= 240V
12
V_CE= 600V
10
8
V_CE= 960V
6
4
2
0
0 20 40 60 80 100 120
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
4.5
4
I_C= 50A
3.5
I_C= 25A
3
2.5
2
I_C=12.5A
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
0 ^{<0.5 % DUTY CYCLE}
-25 0
25 50
75 100 125
T_J, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
100
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature