APT25GP120B Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

APT25GP120B
1200V
POWER MOS 7^® IGBT
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7^® IGBT provides a lower cost alternative to a Power
MOSFET.
• Low Conduction Loss
• 100 kHz operation @ 800V,11A
TO-247
G
C
E
C
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol Parameter
• 50 kHz operation @ 800V, 19A
• RBSOA Rated
G
E
All Ratings: T_C = 25°C unless otherwise specified.
APT25GP120B
UNIT
V_CES
V_GE
V_GEM
I _C1
I _C2
I _CM
RBSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 25°C
Reverse Bias Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±20
±30
69
33
90
90A @ 960V
417
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I _C = 250µA)
Gate Threshold Voltage (V_CE = V_GE, I _C = 1mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 25A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 25A, T_j = 125°C)
Collector Cut-off Current (V_CE = 1200V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 1200V, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
MIN TYP MAX UNIT
1200
3
4.5
6
Volts
3.3 3.9
3.0
250
µA
2500
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com