MS1280 Datasheet, PDF (2/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

MS1280
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BV_CBO
BV_CER
BV_CEO
BV_EBO
HFE
I_C = 100mA
I_C = 100mA
I_C = 100mA
I_E = 20mA
V_CE = 5V
I_E = 0mA
R_BE = 10Ω
I_B = 0mA
I_C = 0mA
I_C = 1A
DYNAMIC
Symbol
P_OUT
G_P
IMD
C_OB
f = 225 MHz
f = 225 MHz
f = 225 MHz
f =1 MHz
Test Conditions
V_CE = 28W
V_CE = 28W
V_CE = 28W
V_CB = 30V
I_C = 3.5 mA
I_C = 3.5 mA
I_C = 3.5 mA
Min.
60
60
30
4.0
10
Value
Typ.
---
---
---
---
---
Max.
---
---
---
---
120
Unit
V
V
V
V
---
Min.
20
7.5
---
---
Value
Typ.
---
---
-53
---
Max.
---
8.0
---
150
Unit
W
dB
dB
pf
IMPEDANCE DATA
FREQ
Z_IN(Ω )
170 MHz
0.6 + j0.7
200 MHz
0.55 + j0.8
230 MHz
P_OUT = 20W
V_CE = 28V
0.5 + j0.9
Z_CL(Ω )
5.9 + j3.5
5.0 + j3.0
4.2 + j2.8
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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