MS1280 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 170-230 MHz
• 28 VOLTS
• IMD = -53 dBc
• P_OUT = 20 WATTS
• G_P = 7.5 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1280 is a gold metallized epitaxial silicon NPN
transistor designed for high linearity class AB operation.
Internal impedance matching and an emitter ballasted
die geometry make this devise ideally suited for VHF and
Band lll television transmitter and transposers.
MS1280
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
TJ
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
60
30
4.0
16
150
+200
-65 to +150
1.2
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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