MRF8372 Datasheet, PDF (2/3 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCEO
BVCES
BVEBO
ICES
HFE
IC = 5.0 mA, IB = 0
Ic = 5.0 mA, VBE = 0
IE = 0.1 mA, IC = 0
VCE = 15 V, VBE = 0 V
VCE = 5.0 v, Ic = 50 mA
MRF8372, R1, R2
MRF8372G, R1, R2
Value
Min.
Typ.
Max.
Unit
16
-
-
V
30
-
-
V
3.0
-
-
V
-
-
0.1
mA
30
-
200
-
FUNCTIONAL
Symbol
Test Conditions
G_PE
η_c
C_OB
f = 870 MHz,
POUT = 0.75W,
VCE = 12.5V
f = 870MHz,
POUT = 0.75W,
VCE = 12.5V
VCB = 15 V, f = 1.0 MHz
Value
Min.
Typ.
Max.
Unit
8.0
9.5
-
dB
50
60
-
%
-
-
2.75
pf
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Rev A 9/2005