MRF8372 Datasheet, PDF (1/3 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF8372, R1, R2
MRF8372G, R1, R2
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
• Specified @ 12.5V, 870 MHz characteristics
• Output Power = 750 mW
• Minimum Gain = 8.0dB
• Efficiency 60% Typical
• Cost Effective SO-8 package
DESCRIPTION: Designed primarily for wideband large signal stages in
the 800 MHz and UHF frequency ranges.
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
IC
Emitter-Base Voltage
Collector Current
PD
Total Device Dissipation @ TC = 50ºC
TSTG
Storage Junction Temperature Range
Thermal Data
R_TH(J-C) Thermal Resistance Junction-Case
Value
Unit
16
V
30
V
3
V
200
mA
2.2
W
-65 to +150
ºC
45
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005