MRF5943C Datasheet, PDF (2/3 Pages) Advanced Power Technology – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICBO
ICEO
hFE
IC = 5 ma IB = 0
IC = 0.1 mA, IE = 0
IE = 0.1 mA, IC = 0
VCB = 15 V, VBE = 0 V
VCE = 20 V, VBE = 0 V
IC = 50 mA, VCE = 15 V
DYNAMIC
Symbol
Ftau
NF
G
U max
Test Conditions
Current-Gain Bandwidth Product
(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)
IC = 35 mA VCE = 15 V f = 200 MHz
IC = 10 mA VCE = 15 V f = 200 MHz
MRF5943C
Value
Min.
Typ.
Max.
Unit
30
-
-
V
40
-
-
V
3.5
-
-
V
-
-
50
µA
-
-
10
µA
25
-
300
Min.
-
-
-
Value
Typ.
1.2
5.5
12
Max.
-
-
-
Unit
GHz
dB
dB
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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