MRF5943C Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF5943C
Features
• Maximum Available Gain = 17dB @ 300MHz
• High f_T – 1.2 GHz typical
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and
oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
P
Total Device Dissipation
D
TSTG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance, Junction – Case
Value
Unit
30
V
40
V
3.5
V
400
mA
1.0
W
-65 to +150
°C
125
ºC/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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