MRF586 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

STATIC
Symbol
BV_CEO
BV_EBO
BV_CBO
I_CBO
I_C = 5.0 mA
I_E = 0.1 mA
I_C =1.0 mA
V_CB = 10 V
HFE
V_CE = 5.0 V
Test Conditions
I_C = 50 mA
DYNAMIC
Symbol
Test Conditions
f_T
f = 300 MHz I_C = 90 mA
V_CE = 14 V
C_OB
f = 1.0MHz
V_CB = 10V
MRF586
Value
Min.
Typ.
Max.
Unit
17
-
-
V
3.0
-
-
V
30
-
-
V
-
50
-
µA
40
-
200
-
Min.
-
Value
Typ.
3.0
3.0
Max.
-
Unit
GHz
pf
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
G
U max
Maximum Unilateral Gain
(1)
IC = 40 mA, VCE = 15V, f =
300 MHz
-
12.5
-
dB
MAG
Maximum Available Gain
IC = 40 mA, VCE = 15V, f =
300 MHz
-
13.5
-
dB
|S₂₁|²
Insertion Gain
IC = 40 mA, VCE = 15V, f =
300 MHz
10
11.5
-
dB
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