MRF586 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF586
Features
• Silicon NPN, TO-39 packaged VHF/UHF Transistor
• F_t = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
•
G
U max
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
• |S₂₁|² = 12.5dB (typ) @ 300 MHz, 15v, 40mA
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
The MRF586 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier,
pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
VCBO
VEBO
PD
IC
Collector-Emitter
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation
Collector Current
Value
Unit
17
V
35
V
3.0
V
1.0
W
200
mA
Thermal Data
P_D
Total Device Dissipation @ T_A = 25°C
1.0
Derate above 25°C
5.71
ELECTRICAL SPECIFICATIONS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Watts
mW/°C