MRF581 Datasheet, PDF (2/6 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581/MRF581A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
(on)
HFE
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
Value
Unit
Min.
Typ.
Max.
MRF581
18
MRF581A
15
-
-
Vdc
30
-
-
Vdc
2.5
-
-
Vdc
-
-
0.1
mA
-
-
0.1
mA
MRF581
50
200
MRF581A
90
-
250
-
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Min.
-
-
Value
Typ.
2.0
5.0
Max.
3.0
-
Unit
pF
GHz
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