MRF581 Datasheet, PDF (1/6 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF581/MRF581A
Features
• Low Noise - 2.5 dB @ 500 MHZ
• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
P
D
Tstg
Total Device Dissipation @ TC = 50º C
Derate above 50º C
Total Device Dissipation @ TC = 25º C
Derate above 25º C
Storage Junction Temperature Range
T_Jmax
Maximum Junction Temperature
MRF581 MRF581A
Unit
18
15
Vdc
30
Vdc
2.5
Vdc
200
mA
2.5
25
1.25
10
-65 to +150
150
Watts
mW/ ºC
Watts
mW/ ºC
ºC
ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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