MRF553G Datasheet, PDF (2/5 Pages) Advanced Power Technology – RF MICROWAVE DISCRETE LOW POWER TRANSISTORS

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCES
BVCBO
BVEBO
ICES
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 5 mAdc)
Emitter-Base Breakdown Voltage
(IE = 1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc) Both
DYNAMIC
Symbol
Test Conditions
COB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MRF553
MRF553G
Value
Min.
Typ.
Max.
Unit
16
-
-
Vdc
36
-
-
Vdc
36
-
-
Vdc
4.0
-
-
Vdc
-
-
5
mA
30
-
200
-
Value
Min.
Typ.
Max.
Unit
-
12
20
pF
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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Rev A 9/2005