MRF553G Datasheet, PDF (1/5 Pages) Advanced Power Technology – RF MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF553
MRF553G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
• Specified @ 12.5 V, 175 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 11.5 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
Power Macro
DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
Value
16
36
4.0
500
3.0
40
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005