MRF544 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICBO
ICES
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 50 mAdc, VCE = 6.0 Vdc)
DYNAMIC
Symbol
Test Conditions
COB
CIB
fT
Output Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
Input Capacitance
(VEB = 3Vdc, IE=0, f=1 MHz)
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz)
MRF544
Min.
70
100
3.0
-
-
Value
Typ.
-
-
-
-
1.0
Max.
-
-
-
20
100
15
-
-
Unit
Vdc
Vdc
Vdc
µA
µA
-
Min.
-
-
1000
Value
Typ.
2.5
6.1
1500
Max.
-
-
-
Unit
pF
pF
MHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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