MRF544 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, high Frequency, high breakdown Transistor
• Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
• High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
• High F_T - 1400 MHz
MRF544
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Value
Unit
70
Vdc
100
Vdc
3.0
Vdc
400
mA
Thermal Data
P
D
Total Device Dissipation @ T_A = 25ºC
Derate above 25ºC
3.5
Watts
20
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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