MMBR911LT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – NPN Silicon High-Frequency Transistor

THERMAL CHARACTERISTICS
Symbol
Rating
RθJC
Thermal Resistance, Junction to Case
MMBR911LT1
MMBR911LT1G
Value
225
Unit
°C/W
ELECTRICAL SPECIFICATIONS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Symbol
Characteristics
Min.
Collector-Emitter Breakdown Voltage
V(BR)CEO
(IC=1.0 mA, IB=0)
12
Collector-Base Breakdown Voltage
V(BR)CBO
(IC=0.1 mA, IE=0)
20
Emitter-Base Breakdown Voltage
V(BR)EBO
(IE=0.1 mA, IC=0)
2.0
Collector Cutoff Current
ICBO
(VCB= 15 Vdc, IE=0)
-
ON CHARACTERISTICS
Symbol
Characteristics
Min.
DC Current Gain
HFE
(IC=30 mAdc, VCE=10 Vdc)
30
Value
Typ.
-
-
-
-
Value
Typ.
-
Max.
-
-
-
50
Max.
200
Unit
Vdc
Vdc
Vdc
nAdc
Unit
-
DYNAMIC CHARACTERISTICS
Symbol
Characteristics
Collector-Base Capacitance
Ccb
(VCB=10 Vdc, IE=0, f=1.0 MHz)
Current Gain-Bandwidth Product
fT
(VCE=10 Vdc, IC=30 mAdc, f=1.0 GHz)
Min.
-
-
Value
Typ.
-
6.0
Max.
1.0
-
Unit
pF
GHz
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Rev A 9/2005