MMBR911LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – NPN Silicon High-Frequency Transistor

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
NPN SILICON
LOW NOISE, HIGH-FREQUENCY TRANSISTOR
DESCRIPTION:
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
small–signal plastic transistor offers superior quality and performance
at low cost.
MMBR911LT1
MMBR911LT1G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
FEATURES:
• High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
• Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
• High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
• State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
TSTG
TJmax
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation @ Tcase = 75°C (1)
Derate linearly above Tcase = 75°C
Storage Temperature
Maximum Junction Temperature
Value
12
20
2.0
60
333
4.44
-55 to +150
150
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
ºC
ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005