APT50M60L2VFR Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

DYNAMIC CHARACTERISTICS
APT50M60L2VFR
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
12000
1600
pF
610
Q_g
Q_gs
L _Qgd
ICA ^td(on)
t_r
HN t_d(off)
C _tf
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6W
TE _{ION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
E T _Symbol
NC _{MA IS}
VA ^{R ISM}
D ^{O V}SD
A _INF dv_/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
Peak Diode Recovery ^dv/_dt ⁵
500
80
210
20
25
80
8
MIN TYP MAX
77
308
1.3
5
Reverse Recovery Time
t_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
300
600
Reverse Recovery Charge
Q_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
2.6
T_j = 125°C
10
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
I_RRM
Peak Recovery Current
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
17
Amps
34
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_qJC
R_qJA
Junction to Case
Junction to Ambient
0.15
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
3 _{See MIL-STD-750 Method 3471}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
4 _{Starting Tj = +25°C, L = 1.08mH, RG = 25W, Peak IL = 77A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-264 MAX^TM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434
5,256,583 4,748,103 5,283,202
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
5,182,234 5,019,522
5,231,474 5,434,095
5,262,336
5,528,058