APT50M60L2VFR Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT50M60L2VFR
500V 77A 0.060W
POWER MOS V ^{® FREDFET}
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
TO-264
Max
• TO-264 MAX Package
• Faster Switching
D
• Lower Leakage
• Fast Recovery Body Diode
MAXIMUM RATINGS
• 100% Avalanche Tested
G
S
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
APT50M60L2VFR
Drain-Source Voltage
L _{Continuous Drain Current @ TC = 25°C}
ICA ^{Pulsed Drain Current 1}
N ^{Gate-Source Voltage Continuous}
H _{Gate-Source Voltage Transient}
EC ^{N Total Power Dissipation @ T}C ^{= 25°C}
T _{IO Linear Derating Factor}
E T _{Operating and Storage Junction Temperature Range}
NC _MA Lead Temperature: 0.063" from Case for 10 Sec.
VA ^{R Avalanche Current 1 (Repetitive and Non-Repetitive)}
D ^O Repetitive Avalanche Energy ¹
A _{INF Single Pulse Avalanche Energy 4}
500
77
308
±30
±40
825
6.6
-55 to 150
300
77
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_{DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)}
500
I_D(on) On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
77
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 5mA)
2
0.060
250
1000
±100
4
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: [phone]
Phone: [phone]
FAX: [phone]
FAX: [phone]