APT40GF120JRD Datasheet, PDF (2/4 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs

DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁴
Turn-off Switching Energy
Total Switching Losses ⁴
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses ⁴
Forward Transconductance
Test Conditions
MIN
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = 0.8V_CES
I_C = I_C2
R_G = 5Ω
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 5Ω
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 5Ω
T_J = +25°C
V_CE = 20V, I_C = I_C2
6
APT40GF120JRD
TYP MAX UNIT
3500 4700
490 700 pF
230 345
320
30
nC
200
35
130
ns
215
145
35
90
ns
400
140
4.5
5.0
mJ
9.5
35
100
ns
340
105
8.0
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
MIN
R_ΘJC
Junction to Case (IGBT)
Junction to Case (FRED)
R_ΘJA Junction to Ambient
W_T
Package Weight
Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{Leakages include the FRED and IGBT.}
3 _{See MIL-STD-750 Method 3471}
4 _{Switching losses include the FRED and IGBT.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
1.03
29.2
MAX
0.32
0.66
20
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m