APT30M36B2LL Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
APT30M36 B2LL - LLL
Symbol Characteristic
Test Conditions
MIN TYP
C_iss
C_oss
Input Capacitance
Output Capacitance
V_GS = 0V
V_DS = 25V
6540
1564
C_{rss Reverse Transfer Capacitance}
f = 1 MHz
74
Q_g
Total Gate Charge ³
V_GS = 10V
122
Q_gs
Q_gd
L _td(on)
ICA ^tr
N ^t_d(off)
H _tf
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 1.6W
TEC _{ION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
E T _Symbol
NC _{MA IS}
VA ^{R I}SM
D _FO V_SD
A _{IN t rr}
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
33
47
14
19
30
5
MIN TYP
530
Q _rr Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
11.5
dv_{/dt Peak Diode Recovery} dv_/dt 5
MAX
MAX
84
336
1.3
5
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
R_qJC
R_qJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.22
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
3 _{See MIL-STD-750 Method 3471}
temperature.
4 _{Starting Tj = +25°C, L = 0.71mH, RG = 25W, Peak IL = 84A}
2 _{Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%}
5 dv_{/dt numbers reflect the limitations of the test circuit rather than the}
device itself. I_S £ -I_D[Cont.] ^di/_dt £ 700A/µs V_R £ V_DSS T_J £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX^TM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
2.29 (.090)
2.69 (.106)
Gate
Drain
Source