APT30M36B2LL Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT30M36B2LL
APT30M36LLL
300V 84A 0.036W
POWER MOS 7^TM
B2LL
Power MOS 7^TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7^TM by significantly lowering R_DS(ON)
and Q_g. Power MOS 7^TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
T-MAX™
TO-264
LLL
D
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
APT30M36
Drain-Source Voltage
L _{Continuous Drain Current @ TC = 25°C}
ICA ^{Pulsed Drain Current 1}
N ^{Gate-Source Voltage Continuous}
H _{Gate-Source Voltage Transient}
EC ^{N Total Power Dissipation @ T}C ^{= 25°C}
T _{IO Linear Derating Factor}
E T _{Operating and Storage Junction Temperature Range}
NC ^{A Lead Temperature: 0.063" from Case for 10 Sec.}
VA ^{RM Avalanche Current 1 (Repetitive and Non-Repetitive)}
D ^{O Repetitive Avalanche Energy 1}
A _{INF Single Pulse Avalanche Energy} 4
300
84
336
±30
±40
568
4.55
-55 to 150
300
84
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_{DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)}
300
I_D(on) On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
84
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
3
0.036
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
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