2N5109 Datasheet, PDF (2/5 Pages) Semicoa Semiconductor – Type 2N5109 Geometry 1007 Polarity NPN

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO(sus) Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
BVCER(sus) Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
ICEO
Collector Cutoff Current
(VCE = 15 Vdc, IB = 0)
IEBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
(on)
HFE
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 15.0 Vdc)
2N5109
Value
Unit
Min.
Typ.
Max.
20
-
-
Vdc
40
-
-
Vdc
-
-
20
µA
-
-
100
µA
5
-
-
-
40
-
120
-
DYNAMIC
Symbol
fT
Test Conditions
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Min.
-
Value
Typ.
1200
Max.
-
Unit
MHz
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