2N5109 Datasheet, PDF (1/5 Pages) Semicoa Semiconductor – Type 2N5109 Geometry 1007 Polarity NPN

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 50mA
• Maximum Unilateral Gain = 12dB (typ) @ 200 MHz
2N5109
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver,
driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_C = 75º C (1)
Derate above 25º C
Note 1. Total Device dissipation at T_A = 25º C is 1 Watt.
Value
20
40
3.0
400
2.5
20
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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