2N5031 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N5031
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
(on)
HFE
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 0.01 mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 0.01mAdc, IC = 0)
Collector Cutoff Current
(VCE = 6.0 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc)
Min.
10
15
3.0
-
Value
Typ.
-
-
-
1.0
Max.
-
-
-
10
Unit
Vdc
Vdc
Vdc
nA
25
-
300
-
DYNAMIC
Symbol
fT
CCB
Test Conditions
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
Output Capacitance
(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
Min.
1200
-
Value
Typ.
-
2.5
Max.
2500
-
FUNCTIONAL
Symbol
G
U max
MAG
Test Conditions
Maximum Unilateral Gain (1) IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
Maximum Available Gain
IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
Min.
-
-
Value
Typ.
12
12.4
Max.
-
-
Unit
MHz
dB
Unit
dB
dB
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