2N5031 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-72 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
• Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
2N5031
2
1
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver,
applications targeted for military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_A = 25º C
Derate above 25º C
Value
10
15
3.0
20
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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