2N3866 Datasheet, PDF (2/5 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistors

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCER
BVCEO
BVCBO
BVEBO
ICEO
ICEX
(on)
HFE
VCE(sat)
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc)
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
2N3866 / 2N3866A
Value
Min.
Typ.
Max.
Unit
55
-
-
Vdc
30
-
-
Vdc
55
-
-
Vdc
3.5
-
-
Vdc
-
-
20
µA
-
-
100
µA
5.0
-
-
-
10
-
200
-
25
-
200
-
-
-
1.0
Vdc
DYNAMIC
Symbol
Test Conditions
fT
COB
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2N3866
2N3866A
Min.
500
800
-
Value
Typ.
800
-
2.8
Max.
-
-
3.5
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
MHz
pF