HMC7229CHIPS Datasheet, PDF (6/16 Pages) Analog Devices – Point to point radios

HMC7229CHIPS
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
2
V_GG1
3
V_DD1
4
V_DD2
5
V_DD3
6
V_DD4
V_{REF 7}
Data Sheet
1 RFIN
HMC7229CHIPS
RFOUT 8
V_{DET 9}
V_GG2
14
V_DD5
13
V_DD6
12
V_DD7
11
V_DD8
10
Figure 2. Pad Configuration
Table 5. Pad Function Descriptions
Pad No.
Mnemonic
Description
1
RFIN
RF Input. This pad is ac-coupled and matched to 50 Ω.
2, 14
VGG1, VGG2
Gate Controls for the Power Amplifier. Adjust the VGG1 or VGG2 supply voltage to achieve recommended bias
current. External 100 pF, 10 nF, and 4.7 μF bypass capacitors are required.
3 to 6,
10 to 13
VDD1 to VDD8
Drain Bias Voltages. External 100 pF, 10 nF, and 4.7 μF bypass capacitors are required.
7
VREF
DC Voltage of the Diode. This pad is biased through an external detector circuit used for temperature
compensation of VDET (see Figure 36).
8
RFOUT
RF Output. This pin is ac-coupled and matched to 50 Ω.
9
VDET
DC Voltage Representing the RF Output Power. This pad is rectified by the diode that is biased through
an external resistor (see Figure 36).
Die Bottom GND
Die Bottom. The die bottom must be connected to RF/dc ground. See Figure 9 for the interface schematic.
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