HMC7229CHIPS Datasheet, PDF (1/16 Pages) Analog Devices – Point to point radios

Data Sheet
FEATURES
32 dBm PSAT with 22% PAE
P1dB POUT: 31.5 dBm
High OIP3: 39.5 dBm
High gain: 24.5 dB
50 Ω matched input/output
APPLICATIONS
Point to point radios
Point to multipoint Radio
VSAT and SATCOM
33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W
Power Amplifier with Power Detector
HMC7229CHIPS
GENERAL DESCRIPTION
The HMC7229CHIPS is a four-stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 1 W power
amplifier with an integrated temperature compensated on-chip
power detector, operating between 33 GHz and 40 GHz. The
HMC7229CHIPS provides a typical range of 23 dB to 24.5 dB of
gain and a range of 30 dBm to 32 dBm of saturated output power
(PSAT) with 12% to 22% (typical) power added efficiency (PAE)
range across a band of 33 GHz to 40 GHz from a 6 V supply. With
an excellent OIP3 with a range of 37 dBm to 39.5 dBm across a
band of 33 GHz to 40 GHz, the HMC7229CHIPS is ideal for linear
applications such as high capacity point to point or point to
multipoint radios or very small aperture terminal (VSAT)/satellite
communications (SATCOM) applications demanding 32 dBm of
efficient saturated output power. The radio frequency (RF) input/
output ports are internally matched and dc blocked for easy
integration into higher level assemblies.
FUNCTIONAL BLOCK DIAGRAM
V_GG1
V_DD1
V_DD2
V_DD3
V_DD4
2
3
4
5
6
7 ^VREF
RFIN 1
HMC7229CHIPS
8 RFOUT
14
V_GG2
13
V_DD5
12
V_DD6
11
V_DD7
Figure 1.
9 ^VDET
10
V_DD8
Rev. 0
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