OP249 Datasheet, PDF (5/17 Pages) Analog Devices – Dual, Precision JFET High Speed Operational Amplifier

OUT (A)
–IN (A)
DICE CHARACTERISTICS
V+
OUT (B)
–IN (B)
+IN (A)
+IN (B)
V–
DIE SIZE 0.072 ؋ 0.112 inch, 8,064 sq. mils
(1.83 ؋ 2.84 mm, 5.2 sq. mm)
OP249
WAFER TEST LIMITS _{(@ VS = ؎15 V, TJ = +25؇C unless otherwise noted)}
Parameter
Symbol
Conditions
OP249GBC
Limits
Units
Offset Voltage
Offset Voltage Temperature Coefficient
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
Power Supply Rejection Ratio
Large-Signal Voltage Gain
Output Voltage Swing
Short-Circuit Current Limit
Supply Current
Slew Rate
V_OS
TCV_OS
I_B
I_OS
IVR
CMR
PSRR
A_VO
V_O
I_SC
I_SY
SR
–40°C ≤ T_J ≤ 85°C
V_CM = 0 V
V_CM = 0 V
(Note 1)
V_CM = ± 11 V
V_S = ± 4.5 V to ± 18 V
R_L = 2 kΩ
R_L = 2 kΩ
Output Shorted to Ground
No Load; V_O = 0 V
R_L = 2 kΩ, C_L = 50 pF
0.5
6.0
225
75
± 11
76
100
250
± 12.0
± 20/± 60
7.0
16.5
mV max
µV/°C max
pA max
pA max
V min
dB min
µV/V max
V/mV min
V min
mA min/max
mA max
V/µs min
NOTES
1_{Guaranteed by CMR test.}
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
REV. C
–5–