HMC589AST89E Datasheet, PDF (5/7 Pages) Analog Devices – InGaP HBT GAIN BLOCK

Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+10 dBm up to 1 GHz
+8 dBm from 1-4 GHz
150 °C
0.45 W
145 °C/W
-65 to +150 °C
-40 to +85 °C
Class 2
Outline Drawing
HMC589AST89E
v01.0516
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
HMC589AST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
Package Marking ^[2]
H589A
XXXX
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: [phone] • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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