HMC459 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz

v01.1007
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
Pad Descriptions
Pad Number
Function
3
1
RFIN
Description
This pad is DC coupled and matched to 50 Ohms.
Interface Schematic
Gate Control 2 for amplifier. +3V should be applied to Vgg2
2
Vgg2
for nominal operation. Vgg2 may be adjusted between 0 to
+5V to temperature compensate gain.
RF output for amplifier. Connect the DC
4
RFOUT & Vdd
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
Gate Control 1 for amplifier. Adjust between -2 to 0V
5
Vgg1
to achieve Idd= 290 mA.
Low frequency termination. Attach bypass capacitor per
3
ACG1
application circuit here in.
6
Die
Bottom
ACG2
Low frequency termination. Attach bypass capacitor per
application circuit here in.
GND
Die bottom must be connected to RF/DC ground.
3 - 32
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