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HMC459 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
v01.1007
Typical Applications
The HMC459 wideband driver is ideal for:
• Telecom Infrastructure
3
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Functional Diagram
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
Features
P1dB Output Power: +25 dBm
Gain: 17 dB
Output IP3: +31.5 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
General Description
The HMC459 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 18 GHz. The amplifier provides 17 dB of gain,
+31.5 dBm output IP3 and +25 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is good making the
HMC459 ideal for EW, ECM and radar driver amplifier
applications. The HMC459 amplifier I/O’s are inter-
nally matched to 50 Ohms facilitating easy integration
into Multi-Chip-Modules (MCMs). All data is with the
chip in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length 0.31mm
(12 mils).
3 - 28
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min Typ Max Units
Frequency Range
DC - 2.0
DC - 6.0
DC - 10.0
DC - 18.0
GHz
Gain
16.5 18.5
15
18
14
17
9
12
dB
Gain Flatness
±0.5
±0.75
±0.75
dB
Gain Variation Over Temperature
0.02 0.03
0.02 0.03
0.03 0.04
0.035 0.045 dB/ °C
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
21
Saturated Output Power (Psat)
Output Third Order Intercept
(IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
22
27
24
26.5
40
4.0
290
19.5
15
20.5 24.5
26.5
34
4.0
290
19
14
22
25
26.5
31.5
3.0
290
10
14
14
17
21
26
6.5
290
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
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