ADA4898-1 Datasheet, PDF (5/16 Pages) Analog Devices – High Voltage, Low Noise, Low Distortion, Unity Gain Stable, High Speed Op Amp

ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
36 V
Power Dissipation
See Figure 3
Differential Mode Input Voltage
±1.5 V
Common-Mode Input Voltage
±11.4 V
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−40°C to +105°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for a device soldered in the circuit board with its
exposed paddle soldered to a pad on the PCB surface that is
thermally connected to a copper plane, with zero airflow.
Table 4.
Package Type
8-Lead SOIC with EP on Four-Layer Board
θJA θJC Unit
47 29 _°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4898-1
package is limited by the associated rise in junction temperature
(TJ) on the die. At approximately 150°C, which is the glass
transition temperature, the plastic changes its properties. Even
temporarily exceeding this temperature limit can change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the ADA4898-1. Exceeding a
junction temperature of 150°C for an extended period can
result in changes in the silicon devices, potentially causing
failure.
ADA4898-1
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the output load drive. The quiescent power is
the voltage between the supply pins (VS) times the quiescent
current (IS). The power dissipated due to the load drive depends
upon the particular application. For each output, the power due
to load drive is calculated by multiplying the load current by the
associated voltage drop across the device. RMS voltages and
currents must be used in these calculations.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θJA. The exposed paddle on the underside of the
package must be soldered to a pad on the PCB surface that is
thermally connected to a copper plane to achieve the specified θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 8-lead SOIC_EP
(47°C/W) on a JEDEC standard four-layer board, with its
underside paddle soldered to a pad that is thermally connected
to a PCB plane. θJA values are approximations.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
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