HMC606LC5 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz

HMC606LC5
v05.0514
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Absolute Maximum Ratings
Vcc1= Vcc2
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
7V
+15 dBm
175 °C
0.55 W
169.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 0, Pass 100V
Typical Supply Current vs. Vcc1, Vcc2
Vcc1, Vcc2 (V)
+4.5
+5.0
+5.5
Icc1 + Icc2 (mA)
53
64
71
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number
Package Body Material
HMC606LC5
Alumina, White
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
Gold over Nickel
MSL Rating
MSL3 ^[1]
Package Marking ^[2]
H606
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