HMC442 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz

v04.0913
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 7.1 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-4 to 0 Vdc
+20 dBm
175 °C
0.64 W
141 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC442
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
+2.7
+3.0
+3.3
Idd (mA)
82
85
89
79
83
86
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
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