HMC442 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz

v04.0913
HMC442
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Typical Applications
The HMC442 is ideal for use as a medium power
amplifier for:
• Point-to-Point and Point-to-Multi-Point Radios
• VSAT
Features
Saturated Power: +23 dBm @ 25% PAE
Gain: 15 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 1.03 x 1.13 x 0.1 mm
Functional Diagram
General Description
The HMC442 is an efficient GaAs PHEMT MMIC
Medium Power Amplifier which operates between
17.5 and 25.5 GHz. The HMC442 provides 15 dB of
gain, +23 dBm of saturated power and 25% PAE from
a +5V supply voltage. The amplifier chip can easily be
integrated into Multi-Chip-Modules (MCMs) due to its
small size. All data is tested with the chip in a 50 Ohm
test fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, T_A = +25° C, Vdd = 5V, Idd = 85mA*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)
Min.
Typ. Max.
17.5 - 21.0
12
14.5
0.02 0.03
15
10
18
21
20
23
29
6.5
85
110
Min.
Typ. Max.
21.0 - 24.0
12
15
0.02 0.03
13
10
18.5
21.5
20
23
28
5.5
85
110
Min.
Typ. Max.
24.0 - 25.5
13.5
16
0.02 0.03
10
10
19
22
20
23.5
27
6
85
110
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85mA typical.
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