OP282_04 Datasheet, PDF (3/16 Pages) Analog Devices – Dual/Quad Low Power, High Speed JFET Operational Amplifiers

OP282/OP482
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
At VS = ±15.0 V, TA = 25°C, unless otherwise noted; applies to both A and G grade.
Table 1.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short-Circuit Limit
Open-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
Supply Voltage Range
DYNAMIC PERFORMANCE
Slew Rate
Full-Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol Conditions
VOS
OP282
OP282, −40°C ≤ TA ≤ +85°C
VOS
OP482
OP482, −40°C ≤ TA ≤ +85°C
IB
VCM = 0 V
VCM = 0 V¹
IOS
VCM = 0 V
VCM = 0 V¹
CMRR
AVO
∆VOS/∆T
∆IB/∆T
−11 V ≤ VCM ≤ +15 V, −40°C ≤ TA ≤ +85°C
RL = 10 kΩ
RL = 10 kΩ, −40°C ≤ TA ≤ +85°C
VOH
RL = 10 kΩ
VOL
RL = 10 kΩ
ISC
Source
Sink
ZOUT
f = 1 MHz
PSRR
ISY
VS
VS = ±4.5 V to ±18 V, −40°C ≤ TA ≤ +85°C
VO = 0 V, −40°C ≤ TA ≤ 85°C
SR
RL = 10 kΩ
BWP
1% distortion
tS
To 0.01%
GBP
ØO
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
Min Typ Max Unit
0.2
0.2
3
1
−11
70
90
20
15
10
8
3
mV
4.5
mV
4
mV
6
mV
100 pA
500 pA
50
pA
250 pA
+15 V
dB
V/mV
V/mV
µV/°C
pA/°C
+13.5 +13.9
V
−13.9 −13.5 V
3
10
mA
−12 −8
mA
200
Ω
25
316 µV/V
210 250 µA
±4.5
±18 V
7
9
125
1.6
4
55
V/µs
kHz
µs
MHz
Degrees
1.3
µV p-p
36
nV/√Hz
0.01
pA/√Hz
1 _{The input bias and offset currents are characterized at TA = TJ = 85°C. Bias and offset currents are guaranteed but not tested at −40°C.}
Rev. F | Page 3 of 16