HMC636ST89 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz

v02.0311
P1dB vs. Temperature
30
25
20
15
9
10
+25C
+85C
5
-40C
0
0
1
2
3
4
FREQUENCY (GHz)
Power Compression @ 850 MHz
28
24
20
16
12
8
4
0
-4
-8
-20 -16 -12 -8 -4 0
4
8
INPUT POWER (dBm)
Pout
Gain
PAE
12 16
Output IP3 vs. Input Tone Power
45
40
35
30
0 dBm
25
+ 5 dBm
+10 dBm
20
0
1
2
3
4
FREQUENCY (GHz)
HMC636ST89 / 636ST89E
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Psat vs. Temperature
30
25
20
15
10
+25C
+85C
-40C
5
0
0
1
2
3
4
FREQUENCY (GHz)
Power Compression @ 2200 MHz
32
28
Pout
24
Gain
PAE
20
16
12
8
4
0
-4
-8
-20 -16 -12 -8 -4
0
4
8 12 16
INPUT POWER (dBm)
Gain, Power, Output IP3 & Supply Current
vs. Supply Voltage @ 850 MHz
50
40
30
20
10
4.5
Gain
P1dB
Psat
OIP3
4.75
5
Vs (Vdc)
5.25
160
Is ¹⁴⁰
120
100
80
60
40
20
0
5.5
9-3
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