HMC636ST89 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz

HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Typical Applications
The HMC636ST89(E) is ideal for:
• Cellular / PCS / 3G
• WiMAX, WiBro, & Fixed Wireless
• CATV & Cable Modem
9
• Microwave Radio
Functional Diagram
Features
Low Noise Figure: 2.2 dB
High P1dB Output Power: +22 dBm
High Output IP3: +40 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
General Description
The HMC636ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any PCB material or thickness.
Electrical Specifications, Vs= 5.0 V, T_A = +25° C
Parameter
Frequency Range
Min
Typ.
Max
0.2 - 2.0
Gain
10
13
Gain Variation Over Temperature
0.01
0.02
Input Return Loss
10
Output Return Loss
13
Reverse Isolation
22
Output Power for 1 dB Compression (P1dB)
19
22
Output Third Order Intercept (IP3)
36
39
Noise Figure
2.5
Supply Current (Icq)
155
Note: Data taken with broadband bias tee on device output.
Min.
Typ.
Max.
2.0 - 4.0
5
10
0.01
0.02
10
15
20
20
23
36
39
2
155
175
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dB
mA
9-1
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