HMC753 Datasheet, PDF (11/14 Pages) Analog Devices – Point to point radios

HMC753
APPLICATIONS INFORMATION
The HMC753 is a GaAs, MMIC, high electron mobility
transistor (HEMT), low noise, wideband amplifier.
The amplifier uses two field effect transistors (FETs) in series,
source to drain. The basic schematic for a fundamental cell is
shown in Figure 20.
V_DD
V_GG2
RFOUT
RFIN
V_GG1
Figure 20. Fundamental Cell Schematic
All measurements for this device are taken using the evaluation
printed circuit board (PCB) in its default configuration.
Data Sheet
BIASING PROCEDURES
The recommended biasing procedure during power-up is as
follows:
1. Connect GND.
2. Set VGG1 to −1 V.
3. Set VDD to 5 V.
4. Set VGG2 to 1.5 V.
5. Increase VGG1 to achieve a typical quiescent current (IDQ) =
55 mA.
6. Apply the RF signal.
The recommended biasing procedure during power-down is as
follows:
1. Turn off the RF signal.
2. Decrease VGG1 to −1 V to achieve IDQ = 0 mA.
3. Decrease VGG2 to 0 V.
4. Decrease VDD to 0 V.
5. Increase VGG1 to 0 V.
The VDD = 5 V and IDQ = 55 mA bias conditions are the operating
points recommended to optimize the overall performance.
Unless otherwise noted, the data shown is taken using the
recommended bias conditions. Operation of the HMC753 at
different bias conditions may result in performance that differs
from the Typical Performance Characteristics shown in the data
sheet. Biasing the HMC753 for higher drain current typically
results in higher P1dB and output IP3 at the expense of
increased power consumption.
Rev. D | Page 10 of 13