HMC753 Datasheet, PDF (10/14 Pages) Analog Devices – Point to point radios

Data Sheet
THEORY OF OPERATION
The circuit architecture of the HMC753 wideband, low noise
amplifier is shown in Figure 19. The HMC753 uses a single gain
stage to form an amplifier with typical gain of 16.5 dB at 1 GHz
to 6 GHz and 14 dB at the 6 GHz to 11 GHz frequency band.
HMC753
RFIN
RFOUT
Figure 19. Wideband Low Noise Amplifier Circuit Architecture
The HMC753 has single-ended input and output ports whose
impedances are nominally equal to 50 Ω over the frequency
range of 1 GHz to 11 GHz. Consequently, the HMC753 can be
directly inserted into a 50 Ω system with no impedance
matching circuitry required. In addition, multiple HMC753
amplifiers can be cascaded back to back without the need of
external matching circuitry.
HMC753
The input and output impedances are sufficiently stable over
variations in temperature and supply voltage that no impedance
matching compensation is required.
Both RF input and RF output ports have on-chip dc block
capacitors, which eliminates the need for external ac coupling
capacitors.
It is critical to supply very low inductance ground connections
to the ground pins as well as to the backside exposed paddle.
This ensures stable operation.
To achieve the best performance out of the HMC753 and not to
damage the device, the recommended biasing sequence must be
followed; see the Applications Information section for further
details.
Rev. D | Page 9 of 13