ACE6344B Datasheet, PDF (6/11 Pages) ACE Technology Co., LTD. – N and P-Channel Enhancement Mode MOSFET

ACE6344B
N&P-Channel Enhancement Mode MOSFET
Electrical Characteristics (P-Channel)(T_A=25℃ Unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn- Off Rise Time
Input Capacitance
Output Capacitance
Reverse Transfer capacitance
Symbol
V_(BR)DSS
I_DSS
V_GS(TH)
I_GSS
R_DS(ON)
g_FS
V_SD
Conditions
Static
V_GS=0V, I_D=-250uA
V_DS=-20V, V_GS=0V
V_DS=V_GS, I_D=-250uA
V_GS=±12V ,V_DS=0V
V_GS=-4.5V, I_D=-2.5A
V_GS=-2.5V, I_D=-2A
V_DS=-5V, I_D=-2.5A
I_SD=-3A, V_GS=0V
I_S
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Ciss
Coss
Crss
Switching
V_GS=-4.5V,V_DS=-10V,
I_D=-2A
V_DD=-10V, R_L=5Ω,
I_D=-2A, V_GEN=-4.5V,
R_G=3Ω
Dynamic
V_GS=-10V,V_GS=0V,
F=1.0MHZ
Min. Typ. Max. Unit
-20
V
-1 uA
-0.4 -0.7 -1 V
±100 nA
80 110 mΩ
110 140 mΩ
9.5
S
-1.2 V
-2.5 A
3.2
0.6
nC
0.9
11
5.5
ns
22
8
325
63
pF
37
Note:
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.1 6