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| ACE6344B Datasheet, PDF (1/11 Pages) ACE Technology Co., LTD. – N and P-Channel Enhancement Mode MOSFET | |||
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ACE6344B
N&P-Channel Enhancement Mode MOSFET
Description
The ACE634B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level
Features
ï· N-Channel
VDS(V)=20V, ID=3A,
ï· P-Channel
VDS(V)=-20V, ID=-2.5A ,
RDS(ON) <65mΩ (VGS=4.5V)
<90mΩ (VGS=2.5V)
RDS(ON) <110mΩ (VGS=-4.5V)
<140mΩ (VGS=-2.5V)
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Typical
Symbol
Unit
N-Channel P-Channel
Drain-Source Voltage
VDSS
20
-20
V
Gate-Source Voltage
VGSS
±12
Continuous Drain Current (TJ=150â) TA=25â
*AC
TA=70â
ID
3
2.4
±12 V
-2.5
A
-2.2
Drain Current (pulse) * B
IDM
13
-13
A
Power Dissipation
TA=25â
TA=70â
PD
1.15
0.73
1.15
W
0.73
Operating temperature / Storage temperature TJ/ TSTG
-55 to 150
OC
Packaging Type
SOT-23-6L
Marking
2003
.
VER 1.1 1
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