ACE24LC02 Datasheet, PDF (5/17 Pages) ACE Technology Co., LTD. – Two-wire Serial EEPROM

Technology
ACE24(L)C02/04/08/16
Two-wire Serial EEPROM
Memory Organization
ACE24(L)C02, 2K SERIAL EEPROM:
Internally organized with 32 pages of 8 bytes each, the 2K requires an 8-bit data word address
for random word addressing.
ACE24(L)C04, 4K SERIAL EEPROM:
Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data word address
for random word addressing.
ACE24(L)C08, 8K SERIAL EEPROM:
Internally organized with 64 pages of 16 bytes each, the 8K requires a 10-bit data word
address for random word addressing.
ACE24(L)C16, 16K SERIAL EEPROM:
Internally organized with 128 pages of 16 bytes each, the 16K requires an 11-bit data word
address for random word addressing.
Pin Capacitance
Applicable over recommended operating range from: T_A = 25℃, f = 1.0 MHz, V_CC = +2.2V.
Symbol
Test Condition
Max
C_I/
1
O
Input / Output Capacitance (SDA)
8
C_IN1
Input Capacitance (A₀, A₁, A₂, SCL)
6
Note: 1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
V_I/O = 0V
V_IN = 0V
DC Characteristics
ACE24C02/04/08/16
Applicable over recommended operating range from: T_A = -40℃ to +85℃, V_CC = +2.5V to +5.5V, (unless otherwise noted).
Symbol
Parameter
Test Condition
Min Typ Max Units
V_CC
Supply Voltage
2.2
5.5
V
I_CC1
Supply Current
V_CC = 5.0V, Read at 100K
0.4 1.0 mA
I_CC2
Supply Current
V_CC = 5.0V, Write at 100K
2.0 3.0 mA
I_SB1
Standby Current
V_CC = 2.2V, V_IN = V_CC/ V_SS
1.0 µA
I_SB2
Standby Current
V_CC = 5.0V, V_IN = V_CC/ V_SS
6.0 µA
I_LI
Input Leakage Current
V_IN = V_CC/V_SS
0.10 3.0 µA
I_LO
Output Leakage Current
V_OUT = V_CC/ V_SS
0.05 3.0 µA
V_IL1
Input Low Level
-0.6
V_CCx0.3 V
V_IH1
Input High Level
V_CCx0.7
V_CC+0.5 V
V_OL
Output Low Level
V_CC = 2.7V, I_OL = 2.1 mA
0.4
V
VER 1.3 5