ACE24C128_11 Datasheet, PDF (5/18 Pages) ACE Technology Co., LTD. – Two-wire Serial EEPROM

ACE24C128/256
Two-wire Serial EEPROM
Write Protect Description
WP Pin Status
Part of the Array Protected
ACE24C128
ACE24C256
WP=V_CC
Full (128K) Memory
Full (256K) Memory
WP=GND
Normal Read/Write Operations
Memory Organization
ACE24C128, 128K Serial EEPROM:
Internally organized with 256 pages of 64 bytes each, Random word addressing requires a 14-bit data
word address.
ACE24C256, 256K Serial EEPROM:
Internally organized with 512 pages of 64 bytes each, Random word addressing requires a 15-bit data
word address.
Pin Capacitance
Applicable over recommended operating range from: TA = 25℃, f = 1.0 MHz, VCC = +1.7V.
Symbol
C_I/O1
C_IN1
Test Condition
Input / Output Capacitance
Input Capacitance
Max
8
6
Note: 1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
V_I/O = 0V
V_IN = 0V
DC Characteristics
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.7V to +5.5V, (unless otherwise noted).
Symbol
Parameter
Test Condition
Min Typ Max Units
V_CC
Supply Voltage
1.7
5.5
V
I_CC1
Supply Current
V_CC = 5V, Read at 400KHz
0.4 1.0 mA
I_CC2
Supply Current
I_SB1
Standby Current
V_CC = 5V, Write at 400KHz
V_CC = 1.7V, V_IN = V_CC/ V_SS
2.0 3.0 mA
1.0 µA
I_SB2
Standby Current
V_CC = 5.5V, V_IN = V_CC/ V_SS
6.0 µA
I_LI
I_LO
V_IL1
V_IH1
V_OL2
Input Leakage Current
V_IN = V_CC/V_SS
0.10 3.0 µA
Output Leakage Current
V_OUT = V_CC/ V_SS
0.05 3.0 µA
Input Low Level
-0.6
V_CCx0.3 V
Input High Level
V_CCx0.7
V_CC+0.5 V
Output Low Level 2
V_CC = 3.0V, I_OL = 2.1 mA
0.4
V
V_OL1
Output Low Level 1
V_CC = 1.7V, I_OL = 0.15 mA
0.2
V
Note: 1. VIL min and VIH max are reference only and are not tested.
VER 1.5 5