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ACE7401B Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor
ACE7401B
P-Channel Enhancement Mode Field Effect Transistor
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
Dynamic
69.8 139.6
18.52 37.04
Input Capacitance
Ciss
2777.96
Output Capacitance
Coss
VDS=-15V, VGS=0V
f=1MHz
380.67
pF
Reverse Transfer Capacitance
Crss
217.7
Note:
1. The value of RqJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The Power dissipation PDSM is based on RqJA t≤10s value and the maximum allowed junction temperature of
150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of
150°C may be used if the PCB allows it.
2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty
cycles to keep initial TJ =25°C.
4. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large
heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
7. The maximum current rating is package limited.
8. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C
Typical Performance Characteristics
VER 1.2 3